Kink effect in soi mosfet
WebBy decreasing the accumulated hole, one of the most important problems of SOI technology that we called the kink effect, improves and we have lower power consumption. In Fig. … WebC. Shin "Analysis of floating body induced transient behaviors in partially depleted thin film SOI devices" IEEE Trans. Electron Devices vol. 43 pp. 318 1996. 7. A. Wei M. J. Sheroney and D. A. Antoniadis "Transient behavior of the kink effect in partially depleted SOI MOSFET's" IEEE Electron Device Lett.
Kink effect in soi mosfet
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WebThis manuscript has the objective to perform an experimental comparative analysis of the total ionizing dose influence in the Silicon-On-Insulator Metal-Oxide-Semiconductor Field Effect Transistor implemented with the octagonal gate shape (OCTO) and the standard one (rectangular gate shape) counterpart, after a X-ray radiation exposure. The back-gate … Web16 jun. 2015 · The SOI substrates promise to extend the range of applications including VLSI, memory, analog and digital integrated circuits and mixed signal applications. In this paper, the performance of...
WebSilicon-on-insulator(SOI) metal-oxide-semiconductor field-effect transistors(MOS-FETs) are well known for several advantages such as simple process, perfect dielectric isolation, removal of parasitic latch-up phe-nomena, enhancement of operating speed, suppression of interference effect between de-vices and enhancement of radiation hardness [1 ... WebThe kink effect is a well-known floating-body mechanism in partially-depleted (PD) SOI MOSFETs: majority carriers, generated by impact ionization and stored within the …
Web25 jul. 2024 · The kink effect in a fully depleted silicon-on-insulator (SOI) tunnel field-effect transistor (TFET) is studied and compared with the results for a SOI … Web摘要:本文建立了90 nm工艺下的绝缘体上硅浮体器件和选择性埋氧层上硅器件模型, 通过器件电路混合仿真探究了工作温度对上述两种结构的多级反相器链单粒子瞬态脉冲宽度以及器件内部电荷收集过程的影响.研究表明, N型选择性埋氧层上硅器件相较于浮体器件具有更好的抗单粒子能力, 但P型选择性埋 ...
Web24 jul. 2012 · The kink behavior in SOI MOSFET devices has been studied, and the results are made available by authors in the earlier works. 30 For a given gate voltage, the drain …
WebReduction of floating substrate effect in thin-film SOI MOSFETs 作者: J.-P.Colinge, 期刊: Electronics Letters (IET Available online 1986) 卷期: Volume 22 ... and no part of the film can act as a floating substrate. This brings about a dramatic decrease of the so-called 'kink effect'. 点击下载: ... harem 8 crosswordWebReduction of kink effect in thin-film SOI MOSFETs Abstract: Numerical simulation is used to show that potential and electric field distribution within thin, fully depleted SOI devices … harel sophieWebAn analysis of the kink effect in MOS transistors that provides a comprehensive view of the kink effect in bulk silicon MOSFETs and SOI devices is presented. This analysis enables a quantitative description of the excess drain current to be obtained for room and … harel switchWeb17 sep. 2016 · Kink effect in output characteristics of a partially-depleted SOI-MOSFET Full size image Elimination of the kink effects is achievable by provision of a body contact to … harel technologyWebSOI technology is a good way to improve the electrical performance with adding a buried oxide (BOX) layer between the active region of device and substrate.11Effects such as … harel surnameWebThe floating body effect is the effect of dependence of the body potential of a transistor realized by the silicon on insulator (SOI) technology on the history of its biasing and the … harel technology investmentsWeb提出了一种提取BSIMSOI模型参数的新方法,该方法基于遗传算法和局部优化法的结合,同时具有全局优化和局部优化的优点,提取的参数物理意义明确,并且容易得到全局最优解.该方法计算简单,不需要对模型进行深入了解和丰富的参数提取经验,易于推广使用.对用该方法得到的SOI模型进行了模拟,并将模拟 ... harel trained